The new edition is thoroughly revised with six completely new chapters, while the existing EMI chapters are expanded to include many more step-by-step numerical examples and key derivations and EMI mitigation techniques. ![]() This book is the most comprehensive study available of the theoretical and practical aspects of controlling and measuring Electromagnetic Interference in switching power supplies, including input filter instability considerations. © Springer Science+Business Media, LLC 2010. This volume also:-Discusses devices that can have a significant impact on improving the efficiency of the voltage-regulator-modules used to deliver power to microprocessors and graphics chips in laptops and servers-Covers applications in all lower voltage circuits, especially the automotive electronics area Includes numerical simulation examples to explain the operating physics and validate the models-Offers extensive coverage of the role of silicon carbide in the design and structure of power rectifiers "Advanced Power MOSFET Concepts" is a must-read for researchers and practicing engineers in the power device industry. The results of two-dimensional simulations are also given, in order to corroborate the analytical models and give further insight into the device operation. The results of numerical simulations are provided to give additional insight into the device physics and validate the analytical models. Analytical models for explaining the operation of all the advanced power MOSFETs are developed and explained. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Simulation runs relative to a synchronous-rectifier buck-converter have been performed too, in order to verify the correctness and validity of the MOSFET model, and also to investigate the internal dynamics of the main switch and the synchronous rectifier during the behavior on the application. The aim of this work is to give a contribution to the analysis and design of such devices, looking for the actual power converter applications, by exploiting the enormous potential of modern CAD tools. Finally, advanced 2D mixed device and circuit simulations have been carried out finding a good agreement with the experimental results. Hence, a device model was derived through a two-dimensional (2D) process simulator. First of all, the device has been characterized by measuring the output (I-V) and transfer characteristics, the capacitance curves (C-V), the breakdown voltage, the body-drain diode characteristic (I-V) and the reverse recovery performance. This paper proposes a two-dimensional model of low-voltage power MOSFETs, which are suitable for synchronous rectifier applications. Some examples are presented to show how the specific characteristics of MOSFETs and the operating conditions influence as the switching losses as the pulsing currents circulating through the SPC. ![]() Capacitive pulsating currents circulating through the MOSFETs and the SPC during commutations can be analyzed in detail by using the proposed method. The method allows to use non-linear models of inter-electrode MOSFETs capacitances and adopts a novel numerical technique specifically developed to solve the SRSC model ensuring robust and fast simulations. ![]() The proposed method is aimed at providing an effective tool for quick feasibility investigations and comparative evaluations among design solutions using different MOSFETs combinations for the design of H2EF SPCs. The Synchronous Rectification Switching Cells (SRSC) configuration is considered for the investigation, which is used in High-Frequency High-Efficiency (H2EF) SPC design. This paper discusses a novel method for the analysis of MOSFETs commutations and the investigation of related losses and spike current issues in Switching Power Converters (SPC) Design.
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